1) Which type of temperature dependent resistor exhibits a positive temperature coefficient of resistivity?
a. Thermistor
b. Sensistor
c. Both a and b
d. None of the above
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2) Which process plays a crucial role in devising the independency of operating point over the variations in temperature or transistor parameters?
a. Bias stabilization
b. Bias compensation
c. Both a and b
d. None of the above
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3) Which techniques is/are adopted for reducing the drift in the operating point especially when the loss of signal is intolerable?
a. Bias stabilization
b. Bias compensation
c. Both a and b
d. None of the above
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4) On which factor/s do/does the value of thermal resistance depend?
a. Size of transistor
b. Type of cooling system
c. Type of heat transfer mechanism
d. All of the above
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5) Which among the below specified conditions is applicable to prevent the occurrence of thermal runaway in voltage divider bias circuit?
a. VCE < VCC / 2
b. VCE = VCC / 2
c. VCE > VCC / 2
d. None of the above
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6) Which among the below stated notations of h-parameters is used to represent the short-circuit forward current transfer ratio?
a. h11
b. h12
c. h21
d. h22
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7) Consider the assertions given below.
A. Replacement of each coupling and bypass capacitors by a short circuit
B. Replacement of transistor by its hybrid equivalent model for further analysis
C. Replacement of DC voltage sources by a short circuit
Which is the correct sequential order of steps to be carried out for analysis of a transistor amplifier circuit?
a. A, B, C
b. B, A, C
c. A, C, B
d. C, A, B
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8) What should be the value of resistance between collector and ground (R0) for below drawn schematic of transistor amplifier, comprising h-parameters as hie = 1.1 kΩ, hfe = 50, hre= hoe = 0 with short-circuit capacitors?
a. 5.2 k
b. 2.3 k
c. 1.1 k
d. Infinity
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9) Why is the Darlington configuration not suitable for more than two transistors?
a. Because leakage current increases and voltage gain decreases with multiple number of transistors
b. Because leakage current decreases and voltage gain increases with multiple number of transistors
c. Because leakage current as well as voltage gain increases with multiple number of transistors
d. Because leakage current as well as voltage gain decreases with multiple number of transistors
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Answer
Explanation
Related Ques
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ANSWER: Because leakage current increases and voltage gain decreases with multiple number of transistors
Explanation:
No explanation is available for this question!
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10) Which among the below mentioned circuits resemble its behaviour similar to that of an amplifier in high frequency region, as the response decreases with an increase in frequency?
a. Simple high pass circuit
b. Simple low pass circuit
c. Simple band pass circuit
d. Simple band stop circuit
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11) Which among the following is not an advantage of RC coupled amplifiers?
a. High fidelity
b. No core distortion
c. No impedance matching
d. Wide frequency response
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12) Which capacitors assists in preventing the loss of gain due to negative feedback without affecting the DC stability of R-C Coupled amplifier?
a. Coupling capacitors (Cc)
b. Bypass capacitors (CE)
c. Both a and b
d. None of the above
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13) Miller's theorem is applicable in a single stage CE hybrid π model in order to deal with ________
a. Series combination of CC and r'bc
b. Series combination of Ce and r'be
c. Parallel combination of CC and r'bc
d. Parallel combination of Ce and r'be
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14) What should be the value of unity gain frequency for a short circuit CE transistor with gain of 30 at 4MHz and cut-off frequency of about 100 kHz?
a. 40 MHz
b. 80 MHz
c. 120 MHz
d. 150 MHz
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15) Consider a single stage CE amplifier is estimated to possess the bandwidth of about 2MHz in addition to the resistive load of 500 ohm. What should be the value of source resistance in order to get the required bandwidth for the hybrid π equivalent circuit in accordance to the transistor assumptions given below?
hfe = 100, gm = 30 mA , r'bb = 80Ω, Cc = 3pF, fT = 200MHz, Ce = 20pF, fH = 5MHz, r' be = 2kΩ
a. 497.4 Ω
b. 531.15 Ω
c. 731.04 Ω
d. 900 Ω
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16) What would happen, if the signal Xd passes through the feedback network?
a. Xd will get multiplied by 'A'
b. Xd will get multiplied by 'β'
c. Xd will get multiplied by '1 – Aβ'
d. Xd will get multiplied by '1 + Aβ'
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17) Stability of a transfer gain is generally defined as the reciprocal of _______
a. Resistivity
b. Conductivity
c. Sensitivity
d. Desensitivity
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18) What are the consequences over the non-linear distortion by the inception of negative feedback?
a. Level of non-linear distortion goes on increasing
b. Level of non-linear distortion goes on decreasing
c. Level of non-linear distortion undergoes stability
d. None of the above
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Answer
Explanation
Related Ques
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ANSWER: Level of non-linear distortion goes on decreasing
Explanation:
No explanation is available for this question!
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19) According to the property of tuned circuit used in LC oscillators, the decay rate is proportional to________
a. Shape & size of current pulse
b. Time constant
c. Both a and b
d. None of the above
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20) Which among the following measures is/are adopted/used for improving the frequency stability in Colpitt's oscillator?
a. Clapp oscillator
b. Temperature stabilized chamber
c. Voltage regulators
d. All of the above
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21) Which among the following oscillators are specifically preferred at high frequencies?
a. LC oscillators
b. RC oscillator
c. Both a and b
d. None of the above
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22) Which among the below stated parameters gets affected due to drift region in the power transistor?
a. Breakdown voltage
b. On-state losses
c. Switching time
d. All of the above
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23) Which types of power transistors have the capability to withstand the higher junction temperatures?
a. Silicon power transistors
b. Germanium power transistors
c. Both a and b
d. None of the above
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24) Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?
a. Large current
b. Distribution of current in a non-uniform manner
c. Excessive power dissipation
d. All of the above
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25) What is the significance of adopting an interdigitated structure of power transistors?
a. Prevention of current crowding
b. Maintenance of reasonable current densities
c. Both a and b
d. None of the above
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26) Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?
a. Emitter resistance
b. Collector resistance
c. Source resistance
d. Drain resistance
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27) What is the value of gate-to-source voltage (VGS) for the circuit diagram shown below?
a. 1.5 V
b. 2.9 V
c. 3.5 V
d. 4.9 V
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28) Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______
a. VDD & Rs
b. VDD & VDS
c. VDD & ID
d. ID & Rs
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29) Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?
a. PMOS
b. NMOS
c. Both a and b
d. None of the above
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30) Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
a. Vbs > 0
b. Vbs < 0
c. Vbs = 0
d. None of the above
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31) Which among the following are specifically the advantages of bipolar design technology?
A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance
a. A & B
b. A & C
c. B & D
d. C & D
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32) What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?
a. Channel gets pinched off at the drain by increasing the value of Cgd
b. Channel gets pinched off at the source by increasing the value of Cgd
c. Channel gets pinched off at the drain by decreasing the value of Cgd upto zero
d. Channel gets pinched off at the source by decreasing the value of Cgd
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Answer
Explanation
Related Ques
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ANSWER: Channel gets pinched off at the drain by decreasing the value of Cgd upto zero
Explanation:
No explanation is available for this question!
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33) The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
a. Source resistance
b. Load resistance
c. Both a and b
d. None of the above
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